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Samsung broadcasts the first commercial built-in MRAM (eMRAM) product

Today, Samsung announced that it has started mass production of its first commercial embedded magnetically random access memory (eMRAM). The EMRAM module, which is manufactured with its 28 FDS (28nm FD-SOI) process technology, promises to offer higher performance and endurance compared to eFlash. Furthermore, it can be integrated into existing chips according to the manufacturer. Magneto resistive RAM uses a resistance based method which determines which data is stored in a cell, which in turn is based on reading the orientation of two ferromagnetic films separated by a thin barrier. Samsung calls this process Magnetic Tunnel Junction, or MTJ. MRAM is one of the most effective and most sustainable non-volatile memory technologies that exist. Because eMRAM does not require a deletion cycle before writing data, it is 1 000 times faster than eFlash, Samsung says. It also uses lower voltages compared to eFlash, and therefore consumes about 1/400th of the energy during the writing process, according to the manufacturer. On the back, MRAM's density and capacity both fall far from 3D XPoint, DRAM and NAND flash, which greatly reduces their addressable markets. Samsung does not formally disclose the capacity of its new eMRAM module; The company only says that it still has to unload a 1 GB eMRAM chip in 2019, which strongly suggests that the current offer has a lower capacity. With Samsung's 28FDS process technology, Samsung's eMRAM module can be integrated into the back of a chip manufacturing process by adding three more meshes. Consequently, the module is…

Today, Samsung announced that it has started mass production of its first commercial embedded magnetically random access memory (eMRAM). The EMRAM module, which is manufactured with its 28 FDS (28nm FD-SOI) process technology, promises to offer higher performance and endurance compared to eFlash. Furthermore, it can be integrated into existing chips according to the manufacturer. Magneto resistive RAM uses a resistance based method which determines which data is stored in a cell, which in turn is based on reading the orientation of two ferromagnetic films separated by a thin barrier. Samsung calls this process Magnetic Tunnel Junction, or MTJ. MRAM is one of the most effective and most sustainable non-volatile memory technologies that exist. Because eMRAM does not require a deletion cycle before writing data, it is 1

000 times faster than eFlash, Samsung says. It also uses lower voltages compared to eFlash, and therefore consumes about 1/400th of the energy during the writing process, according to the manufacturer.

On the back, MRAM’s density and capacity both fall far from 3D XPoint, DRAM and NAND flash, which greatly reduces their addressable markets. Samsung does not formally disclose the capacity of its new eMRAM module; The company only says that it still has to unload a 1 GB eMRAM chip in 2019, which strongly suggests that the current offer has a lower capacity.

With Samsung’s 28FDS process technology, Samsung’s eMRAM module can be integrated into the back of a chip manufacturing process by adding three more meshes. Consequently, the module is not necessarily dependent on the advanced manufacturing technique used, so that it can be inserted into chips made with bulk, FinFET or FD-SOI manufacturing processes.

Considering its limited capacity, Samsung says the module is primarilly targeted for use in microcontrollers, chips for IoT and AI (neural network, machine learning, etc.).

Meanwhile, Samsung says it will continue to expand its embedded non-volatile memory offers ahead. Among the upcoming options is its 1Gb eMRAM test chip, whose band-out is scheduled for later this year. Further down the line, Samsung is planning to do eMRAM with its 18FDS process, as well as more advanced FinFET-based nodes.

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Source: Samsung

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